Relative Arrangement of InAs Islands in InAs/GaAsSubmonolayer Superlattice

摘要

We studied relative arrangement of InAs islands in asubmonolayer superlattice (SML SL) formed by stacked 0.5 monolayer-thickInAs insertions in a GaAs matrix. We found that at particular growthconditions the InAs islands form predominantly vertically-correlatedarrangement for 5 nm-thick GaAs spacer layers. Which changes topredominantly mixed arrangement for 0.8 nm-thick GaAs spacers.