Growth and Characterization of HgSe:Fe QuantumDots

摘要

We succeeded in growing HgSe:Fe/ZnSe quantum dotstructures using molecular beam epitaxy. The quantum dots haveassembled themselves driven by the high elastic deformation energystored in the highly lattice-mismatched system HgSe:Fe/ZnSe. The growthprocess was monitored and controlled by in-situ RHEED. The surfacestructure was investigated by in-air AFM showing islands with a basediameter of about 20nm and a height between 5nm and 12nm. Theelectronic structure was characterized by infrared magneto-resonancespectroscopy giving direct evidence of the existence of intrinsicallypopulated quantum dot states.