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Organic Field-Effect Transistors Based on 3'-Flouro-2,2',6,6'-Tetraphenyl-4,4'-Dipyranylidene

机译:基于3'-氟-2,2',6,6'-四苯基-4,4'-联吡啶的有机场效应晶体管

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In this work, 3'-flouro-2,2',6,6'-tetraphenyl-4,4'-dipyranylidene (3FDP) was originally synthesized and investigated with density functional theory (DFT) calculations, ultraviolet-visible spectroscopy (UV-Vis) and cyclic voltammetry (CV) in comparison with 2,2',6,6'-tetraphenyl-4,4'-dipyranylidene (DP) and 4'-flouro-2,2',6,6'-tetraphenyl-4,4'-dipyranylidene (4FDP). 3FDP-based organic field-effect transistors (OFETs) were fabricated with bottom contact configuration on bare SiO_2/Si substrate, 1,1,1,3,3,3-hexamethyldisilazane (HMDS) and octadecyltrichlorosilane (OTS) treated substrate, respectively. The HMDS-treated device showed highest mobility of 4 × 10~(-4) cm~2 V~(-1) s~(-1) on/off ratio of 4 × 10~3 and threshold voltage of-10 V. Finally, vacuum deposited 3FDP films morphology was investigated by X-ray diffraction (XRD) analyses and the results showed higher crystallinity of HMDS-treated 3FDP film compared to the OTS-treated film, leading to a better FET performance.
机译:在这项工作中,最初合成了3'-氟-2,2',6,6'-四苯基-4,4'-二吡喃基(3FDP),并通过密度泛函理论(DFT)计算,紫外可见光谱(UV)进行了研究。 -Vis)和循环伏安法(CV)与2,2',6,6'-四苯基-4,4'-二亚吡喃基(DP)和4'-氟-2,2',6,6'-四苯基比较-4,4′-二吡喃基(4FDP)。在裸露的SiO_2 / Si衬底,1,1,1,3,3,3-六甲基二硅氮烷(HMDS)和十八烷基三氯硅烷(OTS)处理的衬底上分别以底部接触结构制造了基于3FDP的有机场效应晶体管(OFET)。经HMDS处理的器件显示出最高的迁移率为4×10〜(-4)cm〜2 V〜(-1)s〜(-1)开/关比为4×10〜3,阈值电压为-10V。最后,通过X射线衍射(XRD)分析研究了真空沉积的3FDP薄膜的形貌,结果表明,与OTS处理的薄膜相比,HMDS处理的3FDP薄膜具有更高的结晶度,从而具有更好的FET性能。

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