A back biasing voltage generator for 28nm UTBB-FDSOI RVT CMOS digital circuits

摘要

This paper presents a Back-Biasing regulation module developed for the next-generation of 28nm UTBB FDSOI (Ultra-Thin Box and Body Fully Depleted Silicon On Insulator) IOT microcontroller products. The module enables both Reverse Back Biasing (RBB) and Forward Back Biasing (FBB) of a standard digital logic region with programmable voltage levels. Main design requirements and regulator load characteristics are analyzed. A description of the load model is also included. Silicon results from a circuit implementation included in i.MX7ULP™ low-power microcontroller are presented. The circuit occupies an area of 0.2mm