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The origin of crack surface instabilities in silicon crystal

机译:硅晶体裂纹表面不稳定性的起因

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Previous investigations showed micron scale height corrugations instabilities on the fracture surface of (111) low energy cleavage plane of silicon, when the crack was propagated in the direction at speed below 1100 m·s-1. These corrugations were evident in three point bending and tensile experiments, and resemble fluctuations on the (111) and (110) low energy cleavage planes, propagating along the intersection line of both planes.
机译:先前的研究表明,当裂纹以低于1100 m·s-1的速度向方向扩展时,硅的(111)低能劈裂面的断裂面上的微米级高度波纹不稳定性。这些波纹在三点弯曲和拉伸实验中很明显,类似于(111)和(110)低能分裂平面上的波动,沿着两个平面的相交线传播。

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