Using Proton Irradiation with Initial Energy over 10 MeV to Improve Turn-off Time of High Power IGBT and FWD

机译：使用初始能量超过10 MeV的质子辐照来改善大功率IGBT和FWD的关断时间

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Authors research a possibility of using accelerated protons with initial energy over 10 MeV to improve turn-on and turn-off properties of high-power IGBT and FWD and demonstrate a method to produce fast IGBT and FWD for voltages 1700V adapted for operation in power electronics at frequency in the range of 20-30kHz.

机译：作者研究了使用初始能量超过10 MeV的加速质子来改善大功率IGBT和FWD的导通和关断性能的可能性，并演示了一种适用于在电力电子设备中工作的，用于1700V电压的快速IGBT和FWD的生产方法。频率在20-30kHz之间。

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来源
《International Conference on Electrical Power Drive Systems》|2018年|1-5|共5页
会议地点 Novocherkassk(RU)
作者
Alexey Surma; Kirill Volobuev; Timur Kulevoy; Valeriy Stolbunov;
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作者单位

Proton- Electrotex Orel Russia;

ITEP Moscow Russia;

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关键词
Insulated gate bipolar transistors; Protons; Radiation effects; Radiative recombination; Semiconductor diodes; Logic gates;

机译：绝缘栅双极型晶体管；质子辐射效应；辐射复合；半导体二极管；逻辑门;

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专利

1. Carrier Lifetime Studies in Electron‐(10–55 MeV) and Proton‐(25–110 MeV) Irradiated Germanium [J] . Fischer J. E., Corelli J. C. Journal of Applied Physics . 1964,第12期

机译：电子（10–55 MeV）和质子（25–110 MeV）辐照锗的载流子寿命研究
2. Time Variations of Low-Energy Protons and Helium Nuclei (0.3-10 MeVucleon) during the Quiescent Time of Solar Activity in the Inner Heliosphere [J] . M. A. Zeldovich, Yu. I. Logachev, G. M. Surova, Cosmic research . 2003,第3期

机译：低能量质子和氦核（0.3-10 MeV /核子）在太阳内部活动的静止时间内的时间变化
3. Electroluminescence efficiency degradation of crystalline silicon solar cells after irradiation with protons in the energy range between 0.8 MeV and 65 MeV [J] . Neitzert HC, Ferrara M, Kunst M, Physica status solidi, B. Basic research . 2008,第9期

机译：能量范围在0.8 MeV至65 MeV的质子辐照后晶体硅太阳能电池的电致发光效率下降
4. Using Proton Irradiation with Initial Energy over 10 MeV to Improve Turn-off Time of High Power IGBT and FWD [C] . Alexey Surma, Kirill Volobuev, Timur Kulevoy, International Conference on Electrical Power Drive Systems . 2018

机译：用初始能量使用质子辐射超过10 MeV，以改善高功率IGBT和FWD的关断时间
5. LOW ENERGY ANTIPROTON PROTON ELASTIC SCATTERING IN THE ENERGY RANGE FROM 10 MEV TO 80 MEV INCIDENT KINETIC ENERGY [D] . GOLDBERG, ROBERT. 1969

机译：从10 MEV到80 MEV偶发动能的低能反质子质子散射
6. Characteristics of Protons Exiting from a Polyethylene Converter Irradiated by Neutrons with Energies between 1 keV and 10 MeV [O] . D. Nikezic, Mehrdad Shahmohammadi Beni, D. Krstic, -1

机译：能量为1 keV至10 MeV的中子辐照从聚乙烯转化器出来的质子的特性
7. Improvement of Turn-off Switching Characteristics of the PT-IGBT by Proton Irradiation [O] . Sung-Hwan Choi, Yong-Hyun Lee, Young-Kyu Kwon, 2006

机译：质子辐照改进PT-IGBT的关断开关特性

Using Proton Irradiation with Initial Energy over 10 MeV to Improve Turn-off Time of High Power IGBT and FWD

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