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Effect of Vacancy-Site Occupation in Half-Heusler Compound ZrNiSn on Phase Stability and Thermoelectric Properties

机译:半霍斯勒化合物ZrNiSn中空位占据对相稳定性和热电性能的影响

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摘要

The half-Heusler compound ZrNiSn has a quite small solubility for Ni from the stoichiometric composition towards the Ni-rich direction since Ni atoms are not supposed to occupy the vacancy-site. Nevertheless, Co and Ir atoms preferably occupy the vacancy-site of ZrNiSn, which is contrary to the prediction that they would substitute for Ni sites. This implies that the phase stability of the compound gradually changes toward that of the Heusler compound Zr(Ni,M)_2Sn (M = Co, Ir). It has been confirmed that there exists a two-phase field between half-Heusler Zr(Ni,Co_x)Sn and Heusler Zr(Ni,Co)_2Sn. The n-type thermoelectric property of ZrNiSn can be converted to p-type by the addition of Co and Ir within the compositional range of the half-Heusler phase. The occupation of vacancy sites by Co and Ir atoms leads to a drastic reduction in the thermal conductivity owing to the enhancement of phonon scattering. With further Co addition, the Heusler phase Zr(Ni,Co)_2Sn alloys show metallic behavior.
机译:半霍斯勒化合物ZrNiSn从化学计量组成向富Ni方向对Ni的溶解度很小,因为不应认为Ni原子占据了空位。然而,Co和Ir原子优选占据ZrNiSn的空位,这与它们将替代Ni位的预测相反。这意味着该化合物的相稳定性朝着Heusler化合物Zr(Ni,M)_2Sn(M = Co,Ir)的方向逐渐变化。已经证实,在半赫斯勒Zr(Ni,Co_x)Sn和赫斯勒Zr(Ni,Co)_2Sn之间存在两相场。 ZrNiSn的n型热电性质可以通过在半Heusler相组成范围内添加Co和Ir转化为p型。由于声子散射的增强,Co和Ir原子占据了空位,导致热导率急剧下降。进一步添加钴后,赫斯勒相Zr(Ni,Co)_2Sn合金表现出金属行为。

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  • 会议地点 Boston MA(US);Boston MA(US)
  • 作者单位

    Tokyo Institute of Technology, Interdisciplinary Graduate School of Science and Engineering, Department of Materials Science and Engineering, 4259-G3-23 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;

    Tokyo Institute of Technology, Interdisciplinary Graduate School of Science and Engineering, Department of Materials Science and Engineering, 4259-G3-23 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;

    Tokyo Institute of Technology, Interdisciplinary Graduate School of Science and Engineering, Department of Materials Science and Engineering, 4259-G3-23 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;

    Tokyo Institute of Technology, Interdisciplinary Graduate School of Science and Engineering, Department of Materials Science and Engineering, 4259-G3-23 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;

    Tokyo Institute of Technology, Interdisciplinary Graduate School of Science and Engineering, Department of Materials Science and Engineering, 4259-G3-23 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
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