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Thermoelectric material using ZrNiSn-based half-Heusler structures
Thermoelectric material using ZrNiSn-based half-Heusler structures
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机译:使用基于ZrNiSn的半霍斯勒结构的热电材料
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摘要
The present invention provides a thermoelectric material made from the ZrNiSn-based, half-Heusler structure where Pd is alloyed on the site of Ni, Hf alloyed on Zr, and Sb doped on Sn, all in accordance with the formula Zr0 5Hf0.5Ni1-xPdxSn0.99Sb0 01. The structure significantly increases the value of the figure of merit (ZT) by decreasing the structure's thermal conductivity, without significant increases to its Seebeck coefficient.
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机译:本发明提供了一种由ZrNiSn基的半赫斯勒结构制成的热电材料,其中Pd在Ni的位置上合金化,Hf在Zr上合金化,并且Sb掺杂在Sn上,均根据式Zr 0 5 Sub> Hf 0.5 Sub> Ni 1-x Sub> Pd x Sub> Sn 0.99 Sub> Sb 0 01 < / Sub>。该结构通过降低结构的热导率来显着提高品质因数(ZT)的值,而不会显着增加其塞贝克系数。
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