Growth of C_(60) Fullerene Films on Semiconductor Surfaces

摘要

We report on a study of vacuum-deposited thin films of C_(60) fullerene on Si (100) and InP (100) semiconductor surfaces. The film morphology and C_(60)―substrate interactions were investigated by using atomic force microscopy (AFM) and Fourier transform infrared spectroscopy (FTIR). For the film deposition, both patterned Si aand InP surfaces were used. It was found that the stronger interactions occur between C_(60) molecules and Si surface, than between C_(60) molecules and InP surface. On InP surface with microrelief of parallel V-grooves oriented in [011] direction, C_(60) films grow preferentially above the groove walls, with C_(60) grains arrayed in the direction perpendicular to the groove axis.