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Analysis and simulation of the performances of Si/SiGe HBTs and monolithic integrated preamplifiers of photoreceivers

机译:Si / SiGe HBT和光接收器单片集成前置放大器的性能分析和仿真

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Abstract: In this paper, we analyzed the characteristics of the noise, current gain, frequency performance and dynamic range of Si/SiGe heterojunction bipolar transistors (Si/SiGe HBTs) for photoreceivers. They are influenced by the following factors: (1) the doping density, the thickness of the high doped and low doped layers of the emitter, (2) recombination currents in the interface of the emitter-base heterojunction, (3) the germanium (Ge) and Boron (B) content and profile in base region, (4) the collector-base heterojunction barrier effect. Then we gave the device analysis model, noise analysis model and their equivalent circuits of the Si/SiGe HBTs, for simulating and optimizing the performance of Si/SiGe HBTs used in photoreceivers. A novel Si/SiGe HBTs of preamplifiers for photoreceivers has been designed and fabricated. Its current gain $beta$-max$/ equals 300, the cut off frequency f$-T$/ equals 10 GHz and the maximum oscillation frequency f$-MAX$/ equals 5 GHz. Based on this, we analyzed, simulated and optimized the performances of the preamplifiers of photoreceivers, include the sensitivity, the dynamic range, the transimpedance characteristics, frequency response, and bit rate of the transimpedance preamplifiers of photoreceivers composed of SiGe HBTs, and optimized the design of SiGe HBTs- based monolithic integrated preamplifiers of photoreceivers. !5
机译:摘要:本文分析了用于光接收器的Si / SiGe异质结双极晶体管(Si / SiGe HBT)的噪声,电流增益,频率性能和动态范围的特性。它们受以下因素影响:(1)发射极的掺杂密度,高掺杂层和低掺杂层的厚度;(2)发射极-基极异质结界面中的复合电流;(3)锗( Ge)和硼(B)在基区的含量和分布,(4)集电极-基异质结势垒效应。然后给出了Si / SiGe HBT器件分析模型,噪声分析模型及其等效电路,以仿真和优化光接收器中Si / SiGe HBT的性能。已经设计和制造了用于光接收器的新型Si / SiGe HBT前置放大器。它的当前增益$ beta $ -max $ /等于300,截止频率f $ -T $ /等于10 GHz,最大振荡频率f $ -MAX $ /等于5 GHz。在此基础上,我们分析,模拟和优化了光接收器前置放大器的性能,包括由SiGe HBT组成的光接收器的前置放大器的灵敏度,动态范围,互阻抗特性,频率响应和比特率,并优化了基于SiGe HBT的单片集成前置放大器的设计。 !5

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