Abstract: A phase-lock-in technique is used for direct monitoring of electron beam intensity profile in 2- D in the scanning electron microscope based electron beam lithography system. Faraday cup assembly, modulated ramp generator, and data-acquisition software necessary for beam parameter measurements were developed. The electron beam diameter of 100 angstrom dimension at 50 pA current with the accuracy $POM 24 angstrom was measured. The effect of variation of operating conditions of SEM on the diameter and shape was observed and studied. The set-up developed enables the user to take in-situ measurement and control e-beam parameters. !5
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