首页> 外文会议>Institute of Physics Conference on Microscopy of Semiconducting Materials; 20030331-20030403; Oxford; GB >Local Investigation of electronic structure modulation in BaPb_xBi_(1-x)O_3 via highly spatially resolved low-loss electron energy loss spectroscopy
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Local Investigation of electronic structure modulation in BaPb_xBi_(1-x)O_3 via highly spatially resolved low-loss electron energy loss spectroscopy

机译:BaPb_xBi_(1-x)O_3中通过高度空间分辨的低损耗电子能量损失谱对电子结构调制的局部研究

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BaPb_(1-x)Bi_xO_3 (BPBO) samples with x=1, 0.25 and 0.5 have been studied using highly spatially resolved electron energy loss spectroscopy in the low loss energy range and energy dispersive X-ray (EDX) analysis. We have been able to identify crystallographic orientations and discover great inhomogeneities even within nanometre distances. We show the modulation of local electronic structure with local composition in BPBO phases with different nominal x. This enables us also to demonstrate the evolution of the metal-semiconductor transition as a function of x.
机译:使用高空间分辨电子能量损失谱在低损失能量范围内和能量色散X射线(EDX)分析中研究了x = 1、0.25和0.5的BaPb_(1-x)Bi_xO_3(BPBO)样品。即使在纳米距离内,我们也能够识别晶体学取向并发现巨大的不均匀性。我们在具有不同标称x的BPBO相中显示了具有局部组成的局部电子结构的调制。这也使我们能够证明金属-半导体跃迁随x的变化。

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