650-V GaN-based MIS-HEMTs using LPCVD-SiNx as passivation and gate dielectric

摘要

In this work, silicon nitride (SiNx) film deposited at 780 °C by low pressure chemical vapor deposition (LPCVD) was employed as the passivation layer and gate dielectric for GaN-based MIS-HEMTs. The LPCVD-SiNx/AlGaN/GaN MIS-HEMTs exhibit suppressed current collapse, small gate leakage current at both reverse and forward gate bias, high forward gate breakdown voltage and high time dependent gate dielectric reliability.