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FLIP CHIP ULTRASONIC GOLD TO GOLD INTERCONNECT FOR SMALLDIE WITH HIGH BUMP COUNT

机译:翻转芯片超声波金到金互连的小面包高计数

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Flip Chip ultrasonic gold to gold interconnect (GGI) hasrnprovided a lead free, no clean, process solution for devicesrnwith bump counts under thirty for the past five years. Thernproven reliability and manufacturing cost savings ofrnultrasonic GGI bonding has now expanded to include largerndie sized up to 10mm2 with bump counts up to one hundred.rnThe mounting accuracy of the GGI process is +/- 10 μm.rnThe availability of a voice coil motor with 100N loadrncapability and improved ultrasonic control has allowed forrnthe performance improvement in ultrasonic GGI bonderrnequipment for fine pitch high bump die bonding.rnImproved devices using GGI CSP packaging such as sensor,rnRF, memory, and HB LED can now use the 100N ultrasonicrnGGI process.rnUltrasonic GGI bonders use a built in monitoring functionrnfor each die bond. Collapse height and impedance can bern“mapped” for each die bond location in real time. Using thernbuilt in process each die location characteristics can bernmapped. The map data is stored as a monitor text log filernfor easy access by other windows based programs.rnGold bonds provide superior bond strength because of thernmonolithic structure of the gold material. Gold bonds alsornhave superior high frequency performance and lowrnresistance when compared to solder or conductive materials.rnDie size reductions are achieved with flip chip ultrasonicrnGGI process when compared to wire bonding. The GGIrnultrasonic GGI process reliably handles gold bump pitchesrnof 100 μm or less in high volume manufacturing. Thisrnprocess capability has allowed die size reductions up to 70%rnwhen compared to wire bonding or C4 solder flip chiprnprocess.rnFlip Chip ultrasonic GGI process can bond die withrnthickness as thin as 100 μm. This has been an importantrnbenefit for mobile products where low profile is critical.rnLow cost organic substrate materials and embedded passivernLTCC substrates are used in flip chip ultrasonic GGI devicernmanufacturing. Because the GGI ultrasonic GGI processrnrelies on solid phase welding of the die to the substrate,rnrelatively low bonding temperatures <150℃ is usedrnallowing it to be an excellent choice for substrate materialsrnsensitive to heat.
机译:倒装芯片超声金对金互连(GGI)在过去五年中为凸点数少于30的器件提供了无铅,不清洁的工艺解决方案。超声波GGI焊接的可靠性和节省的制造成本得到了扩展,现已扩大到包括最大10mm2的凸块和最多100个凸点.rn GGI工艺的安装精度为+/- 10μm.rn具有100N的音圈电机的可用性负载能力和改进的超声波控制已使超声波GGI粘合机的性能得到改善,从而实现了细间距高凸点芯片的粘合。rn使用GGI CSP封装的改进型器件,例如传感器,rnRF,内存和HB LED现在可以使用100N超声波rnGGI工艺。对每个芯片键合使用内置的监视功能。可以实时“映射”每个芯片键合位置的塌陷高度和阻抗。使用内置的工艺,每个管芯的位置特征都可以被覆盖。地图数据存储为监视文本日志文件,以便其他基于Windows的程序轻松访问。由于金材料的整体结构,金键提供了卓越的键强度。与焊料或导电材料相比,金键合还具有出色的高频性能和低电阻。与引线键合相比,倒装芯片超声GGI工艺可实现管芯尺寸的减小。 GGIrnrasrasonic GGI工艺可在大批量生产中可靠地处理100μm或更小的金凸点间距。与引线键合或C4焊料倒装芯片工艺相比,这种工艺能力使芯片尺寸减小了70%。倒装芯片超声GGI工艺可以键合厚度仅为100μm的芯片。这对于低轮廓至关重要的移动产品来说是一个重要的好处。低成本的有机基板材料和嵌入式无源LTCC基板被用于倒装芯片超声GGI器件制造中。由于GGI超声波GGI工艺依赖于芯片与基板的固相焊接,因此使用了相对较低的键合温度<150℃,这使其成为对热敏感的基板材料的理想选择。

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