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首页> 外文期刊>Japanese journal of applied physics >Effect of Atmospheric Pressure Plasma Treatment on Transverse Ultrasonic Bonding of Gold Flip-Chip Bump on Glass Substrate
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Effect of Atmospheric Pressure Plasma Treatment on Transverse Ultrasonic Bonding of Gold Flip-Chip Bump on Glass Substrate

机译:大气压等离子体处理对玻璃基板上倒装金凸块横向超声键合的影响

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摘要

This study was focused on the effect of atmospheric pressure plasma treatment conditions on the ultrasonic bonding properties of Au flip-chip bumps on Au-finished glass substrates. The spreading test of de-ionized (DI) water was carried out on the substrate after the treatment. The plasma treatment was performed with three different gases, N_2, N_2 + O_2, and N_2 + H_2, for various treatment times from 0.3 to 18 s. The surface analysis was carried out after the treatment using Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). The treatment conditions greatly affected the spreading angle and joint strength. The addition of O_2 and H_2 gases to N_2 gas was effective to improve the wettability of the Au-finished substrate and the bondability between the Au bump and substrate, respectively. The spreading angle rapidly decreased with increasing treatment time from 0.3 to 1 s and then decreased slightly with further increase in the treatment time, whereas the bonding strength peaked after the treatment for 0.5 to 2s and then decreased.
机译:这项研究的重点是大气压等离子体处理条件对金加工玻璃基板上金倒装凸块的超声键合性能的影响。处理后,在基板上进行了去离子(DI)水的铺展试验。用三种不同的气体N_2,N_2 + O_2和N_2 + H_2进行等离子体处理,处理时间为0.3到18 s。处理后,使用俄歇电子能谱(AES)和X射线光电子能谱(XPS)进行表面分析。处理条件极大地影响了铺展角和接头强度。在N_2气体中添加O_2和H_2气体分别有效地改善了Au加工后的衬底的润湿性和Au凸点与衬底之间的键合性。扩展角随着处理时间的增加从0.3到1 s迅速减小,然后随着处理时间的进一步增加而略有减小,而粘结强度在处理0.5到2 s后达到峰值,然后下降。

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