High Resolution Dynamic RDS(on) Measurement of GaNFET using Active VDS(on) Measurement Clamp Circuit

摘要

This paper presents the high resolution dynamic on-resistance measurement for GaN device at the system level. The proposed method improves the measurement output linearity and vertical accuracy. It is achieved by omitting the high voltage blocking diode in the main measurement signal path and using the negligible active clamp resistance compared to the instrument resistance. This method also reduces the measurement transient time that provides a fast measurement performance which is important for high speed testing. In this paper the theoretical analysis, method, and hardware designed are explained in detail. In the end, a system verification was built to verify the proposed method.