Design of 110–152 GHz rotary traveling wave oscillators in 65 nm CMOS technology

摘要

A novel rotary traveling wave oscillator (RTWO) is proposed to be an alternative architecture to generate THz signals for long distance high speed communication. As a preliminary work, the design of 110–152 GHz RTWO as the fundamental oscillators is reported in this paper. The transmission line ring, the n-transistor-only cross-coupled inverter pair (CCIP), and the bias-T for the oscillation have been investigated. RTWO with 113 GHz oscillation frequency is designed and layout in TSMC 65 nm CMOS process.