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Grain growth enhancement of selenide CIGSe nanoparticles to densified films using copper selenides

机译:使用硒化铜使硒化物CIGSe纳米颗粒增强致密膜的晶粒长大

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Three-stage coevaporated Copper Indium Gallium diSelenide (CIGSe) solar cells have resulted in the highest efficiency thin-film devices[1]. This success is attributable to copper selenide formation during stage two, promoting grain growth[2]. Herein is the application of secondary copper selenide phases enhancing solar cells made from suspended CIGSe nanoparticles. Larger grains and higher efficiencies result when compared to devices of only CIGSe nanoparticles. Utilizing cupric selenide nanoparticles leads to the production of 4.3% total area power conversion efficiency under AM1.5 simulated radiation. Whereas, in absence of secondary copper selenide phase efficiencies of the CIGSe film is low from poor grain growth.
机译:三级共蒸发铜铟镓硒(CIGSe)太阳能电池已成为效率最高的薄膜器件[1]。这一成功归因于第二阶段硒化铜的形成,促进了晶粒的生长[2]。本文是次级硒化铜相增强由悬浮CIGSe纳米颗粒制成的太阳能电池的应用。与仅CIGSe纳米粒子的设备相比,可产生更大的晶粒和更高的效率。利用硒化铜纳米颗粒可在AM1.5模拟辐射​​下产生4.3%的总面积功率转换效率。然而,在没有次级硒化铜的情况下,由于晶粒生长不良,CIGSe膜的相效率低。

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