SiNX thin films with appropriate antireflection and shift-conversion properties for silicon solar cells

摘要

In the present work, silicon nitride thin films has been deposited by using dichlorosilane in plasma enhanced chemical vapor deposition (PECVD). Adequate deposition condition has been found to obtain the minimal reflectance corresponding to one particular wavelength at the suitable value of refractive index and thickness of the thin film. Furthermore, using transmission electron microscopy (TEM) presence of silicon quantum dots (QD's) in the size regime of 3-4 nm has been found. Strong visible photoluminescnce observed from the as deposited film is due to the wellknown quantum confinement effect. Intense visible pholuminescence observed in the present work could be used for the shift conversion ( downshift) which could subsequently improve the efficiency in silicon solar cells. Optical property studies carried out in the present work highlight the prospects of SiNx thin films for down shifting, antireflection and as an passivation coating in silicon solar cells.