Application Specific Integrated Gate-Drive Circuit for Driving Self-Oscillating Gallium Nitride Logic-Level Power Transistors

摘要

includes two high-voltage transistors for gate-driving, integrated complementary metal-oxide-semiconductor (CMOS) gate-drivers, high-speed floating level-shifter and reset circuitry. A prototype printed circuit board (PCB) was designed to assess the implications of an electrostatic discharge (ESD) diode, its parasitic capacitance and package bondwire connections. The parasitic capacitance was estimated using its discharge time from an initial voltage and the capacitance is 56.7 pF. Both bondwires and the diode's parasitic capacitance is neglegible. The gate-driver's functional behaviour is validated using a parallel LC resonant tank resembling a self-oscillating gate-drive. Measurements and simulations show the ESD diode clamps the output voltage to a minimum of -2V.