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First demonstration of drain current enhancement in SOI tunnel FET with vertical-tunnel-multiplication

机译：垂直隧道倍增技术在SOI隧道FET中首次增强漏极电流的演示

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CMOS tunnel FETs (TFETs) with vertical-tunnel-multiplication (VTM) were fabricated. VTM TFETs initiate band-to-band tunneling (BTBT) parallel to the gate electric field and effectively extend the tunnel area. Impact of the VTM was analyzed using a distributed-element circuit model, and the drain current multiplication by extended tunnel area was experimentally revealed for the first time.

机译：制作了具有垂直隧道倍增（VTM）的CMOS隧道FET（TFET）。 VTM TFET发起平行于栅极电场的带间隧道（BTBT），并有效地扩展了隧道面积。使用分布式元件电路模型分析了VTM的影响，并首次通过实验揭示了漏极电流乘以扩展的隧道面积。

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来源
《IEEE International SOI Conference.》|2012年|p.1-2|共2页
会议地点 Napa CA(US);Napa CA(US)
作者
Morita Y.; Mori T.; Migita S.; Mizubayashi W.; Tanabe A.; Fukuda K.; Masahara M.; Ota H.;
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作者单位

Green Nanoelectronics Center (GNC), Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan;

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原文格式 PDF
正文语种 eng
中图分类有机绝缘材料（总论）;有机绝缘材料（总论）;
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1. Observation of Current Enhancement Due to Drain-Induced Drain Tunneling in Tunnel Field-Effect Transistors [J] . Abhijit Mallik, Avik Chattopadhyay Japanese journal of applied physics . 2012,第8ISSUE1期

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2. The enhancement of gate-induced-drain-leakage (GIDL) current in short-channel SOI MOSFET and its application in measuring lateral bipolar current gain beta [J] . Chen J., Assaderaghi F. IEEE Electron Device Letters . 1992,第11期

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3. Impact of gate tunneling floating-body charging on drain current transients of 0.10 μm-CMOS partially depleted SOI MOSFETs [J] . J.M. Rafi, A. Mercha, E. Simoen, Solid-State Electronics . 2004,第7期

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4. First demonstration of drain current enhancement in SOI tunnel FET with vertical-tunnel-multiplication [C] . Morita Y., Mori T., Migita S., IEEE International SOI Conference . 2012

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First demonstration of drain current enhancement in SOI tunnel FET with vertical-tunnel-multiplication

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