首页> 外文会议>IEEE International Symposium on Physical and Failure Analysis of Integrated Circuits >Sample Preparation in Recover Physical Defects on MIM Related failure for Different Devices In Wafer Fabrication
【24h】

Sample Preparation in Recover Physical Defects on MIM Related failure for Different Devices In Wafer Fabrication

机译:样品制备以恢复晶圆制造中不同器件的MIM相关故障的物理缺陷

获取原文

摘要

In wafer fabrication, sample preparation is becoming increasingly challenging as IC devices evolve to smaller feature sizes and higher densities. [1] Thus, the task of performing successful failure analysis (FA) is more challenging and difficult. Sample preparation is a key activity in material and failure analysis. In semiconductor, there are many different devices, process and design according to the customer requirement. Different FA approach for different devices and failure mode plays a very important role to help identify the root cause of the failure. This paper discusses the techniques used to ensure samples are kept in the best possible condition for the failure analyst. Also, we will discussed in-depth device study and the beauty of good sample preparation methodology through mechanical/chemical parallel polishing or etching together with correct FA approach or methodology to ensure good success rate in identifying failure on MIM breakdown. Two case studies will be discussed here to demonstrate how to identify the physical defect on Cu and Al process on MIM issue.
机译:在晶片制造中,随着IC器件向更小的特征尺寸和更高的密度发展,样品制备正变得越来越具有挑战性。 [1]因此,执行成功的故障分析(FA)的任务更具挑战性和难度。样品制备是材料和失效分析中的关键活动。在半导体中,根据客户要求有许多不同的器件,工艺和设计。针对不同设备和故障模式的不同FA方法在帮助确定故障的根本原因方面起着非常重要的作用。本文讨论了用于确保样本保持故障分析师最佳状态的技术。此外,我们还将讨论深入的设备研究以及通过机械/化学平行抛光或蚀刻以及正确的FA方法或方法来确保良好的成功率,以识别MIM故障的成功率,从而获得良好的样品制备方法。这里将讨论两个案例研究,以演示如何在MIM问题上识别铜和铝工艺中的物理缺陷。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号