Analysis and design of ultra-low power subthreshold MCML gates

摘要

In this paper, ultra-low power current-mode subthreshold MOS current-mode logic (MCML) gates are discussed from a modeling and design perspective. A detailed analysis of the DC characteristics is presented, and the effect of process variations is analyzed in depth. Analysis allows for understanding the main limits of sub-threshold MCML gates in terms of delay/power variability. In particular, it is shown that process variations strongly affect the DC characteristics, and moderately impact delay and power consumption. Interestingly, delay and power variations are shown to be significantly reduced compared to typical values encountered in standard subthreshold CMOS logic. Criteria to size transistors to keep variations within assigned bounds are also derived. Results of Monte Carlo simulations with a 65-nm CMOS technology are reported to validate theoretical results.