An extensive comparative study of switching losses prediction in power MOSFETs

摘要

This paper presents a study of estimation techniques applied to power MOSFET switching losses. Three loss prediction methods are, then, chosen for this proposal. In this context, the first one uses simple equations to describe the switching transient. The second estimation technique is an improved version of the previous one as it considers the variations regarding reverse transfer capacitance of the device and, finally, the third one adopts the insertion of stray capacitances and inductances. The aforementioned methods are briefly revised and validated concerning results obtained from experimental tests using double pulse circuit, where aspects such as complexity and relative error are investigated.