Research on Current Sharing Method of SiC MOSFET Parallel Modules

摘要

This work analyzes current sharing methods for SiC MOSFETs in parallel. A novel method of combination gate resistance compensation with coupling inductance is presented. The different methods including series resistance, coupled inductance and combination the gate resistance compensation with coupling inductance are simulated under static and dynamic conditions for SiC MOSFETs in parallel. The results show that the current imbalance is reduced from 10.9% to 1.47% by means of the current sharing method of combination the gate resistance compensation with coupling inductance.