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A XANES Study of Natural Oxide Films on Plated Tin

机译:XANES研究镀锡上的天然氧化膜

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Like the oxide films that form on several metals, the natural oxide film that forms on tin is very thin, approximately 20 nm at most and it may less than 10 nm in the newly plated surface. Basically, obtaining the properties of oxide films is a prerequisite for calculating the electrical contact resistance. However, in most actual connectors, the initial film structure is broken during connecting action. Thus, knowledge of the precise properties of oxide films has not been considered necessary for designing connectors. The authors of previous reports attempted to calculate the electrical contact resistance of tin-plated terminals using analytical models. The construction of such computational analytical models requires knowledge of the precise properties of oxides. That is one of the motivations of the present study. The electronic structure of natural oxide films was investigated in this work by soft X-ray absorption near-edge structure (XANES) spectroscopy. The O K-edge and Sn M
机译:就像在几种金属上形成的氧化膜一样,在锡上形成的天然氧化膜也很薄,最多约为20 nm,在新镀的表面可能小于10 nm。基本上,获得氧化膜的特性是计算电接触电阻的先决条件。但是,在大多数实际的连接器中,初始薄膜结构在连接过程中会破裂。因此,对于设计连接器,没有必要知道氧化膜的精确特性。以前的报告的作者试图使用分析模型来计算镀锡端子的电接触电阻。这种计算分析模型的构建需要了解氧化物的精确特性。这是本研究的动机之一。在这项工作中,通过软X射线吸收近边缘结构(XANES)光谱研究了天然氧化物膜的电子结构。 O K-edge和Sn M

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