An Assessment of Parallel Connected Silicon Carbide based Electronic Switches

摘要

In this paper, an analysis of the behavior of an electronic switch using SiC-MOSFET semiconductors connected in parallel to be able to raise the working power of the electronic switch is presented. In regards to detect any problems of parallel operation of SiC-MOSFET, the current's switching waveforms of each device and their corresponding sum were detailed observed in through experimental implementations in a bidirectional switch. Source current of the parallel SiC-MOSFET with separate gate driver, drain current of those with separate gate driver, and drain current of one with single gate driver were examined. Even though two heat sinks were separated and switching frequency was 156 kHz, the temperature of the two SiC-MOSFET was 36°C in ambient temperature of 25°C exhibiting excellent thermal stability. Switching waveforms of drain current of the parallel SiC-MOSFET with single gate driver gave the best results.