An alternative apporach for modeling the hot carrier degradation of the Si/SiO_2 interface

摘要

An alternative approach for modeling the hot carrier degradation of the Si/SiO_2 interface based on the dispersive characteristics of the interface trap generation has been proposed. The time-dependent interface trap generation has been modeled using the stretched exponential expression. The conventional power law of degradation is just the approximation of this general form. Very good agreement has been found between the theoretical model and teh experiemntal data. This approach gives more physical insight into the understanding of the mechanism for the interface trap generation.