Abstract: A discrete peeled high electron mobility transistor (HEMT) device was integrated into a 10 GHz amplifier. The discrete HEMT device interconnects were made using photo patterned metal, stepping from the 10 mil alumina host substrate onto the 1.3 $mu@m thick peeled GaAs HEMT layer, eliminating the need for bond wires and creating a fully integrated circuit. Testing of device indicate that the peeled device is not degraded by the peel off step but rather there is an improvement in the quantum well carrier confinement. Circuit testing resulted in a maximum gain of 8.5 dB and a return loss minimum of $MIN@12 dB.!6
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机译：摘要：离散的剥离式高电子迁移率晶体管（HEMT）器件被集成到10 GHz放大器中。分立的HEMT器件互连是使用光图案化的金属制成的，从10 mil氧化铝主体衬底到1.3μm厚的剥离式GaAs HEMT层，从而消除了对键合线的需求并创建了完整的集成电路。器件的测试表明，被剥离的器件不会因剥离步骤而退化，而是量子阱载流子限制得到了改善。电路测试得出最大增益为8.5 dB，最小回波损耗为$ MIN @ 12 dB。！6
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