Abstract: This paper describes the progress of AlInAs/GaInAs HBT devices and ICs. A cutoff frequency (f$-T$/) and a maximum frequency of oscillation of 130 GHz and 91 GHz, respectively, have been achieved with graded base-emitter junctions. A divide-by-four circuit clocked at 39.5 GHz, an 8/9 dual modulus divider consisting of 128 transistors clocked at 9 GHz, a broad band amplifier with 8 dB gain and 33 GHz bandwidth, and a dc-to-16-GHz Gilbert Gain Cell active mixer will be described.!11
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