Paralleling New Generation Power MOSFETs

摘要

Current distribution within a group of paralleled devices is of utmost concern to the designer. To provide for a stable and reliable operation several questions must be addressed. Is there any asymmetrical current sharing? If so, some devices may run hotter than others. Does the asymmetry cause any significant increase in total power dissipation? What is the maximum junction temperature of the devices? Also, is any device operating near or outside its safe operating area (SOA)? The answers to these questions depend on the specific operating state of each of the devices. This paper discusses both gain and temperature coefficient considerations for new generation Power MOSFETs. Suggestions are made which allow for simple and economical device matching in the field.