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Reduced leakage currents of CdZnTe radiation detectors with HgTe/HgCdTe superlattice contacts

机译:具有HgTe / HgCdTe超晶格触点的CdZnTe辐射探测器的泄漏电流降低

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Room-temperature-operating CdZnTe radiation detectors have high energy resolution, linear energy response and are capable of operating in normal counting and spectroscopic modes, hence are highly desirable for medical diagnosis, nondestructive industrial evaluations, homeland security, counterterrorism inspections and nuclear proliferation detection to ensure national and international nuclear safety. HgTe/HgCdTe superlattices can be designed to selectively transport one carrier species while hindering transport of the other. Specifically, one designs a large carrier effective mass for undesired carriers in the electric field direction, which results in low carrier velocities, and yet a density of states for undesired carrier that is lower than that of a comparable bulk semiconductor, which results in low carrier concentrations, hence a low current density under an electric field. The opposite carrier species can be designed to have a large velocity and high density of states, hence producing a large current density. By employing HgTe/HgCdTe superlattices as contact layers intermediate between CdZnTe absorbers and metal contacts, leakage currents under high electric fields are reduced and improved x-ray and γ-ray detector performance is anticipated. Pixilated CdZnTe radiation detectors arrays were fabricated and characterized to evaluate the effectiveness of HgTe/HgCdTe superlattices in reducing leakage currents. Current-voltage characteristics show that HgTe/HgCdTe superlattice contact layers consistently result in significantly reduced leakage currents relative to detectors with only metal contacts.© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
机译:室温操作的CdZnTe辐射探测器具有高能量分辨率,线性能量响应并且能够以正常计数和光谱模式运行,因此非常适合用于医学诊断,无损工业评估,国土安全,反恐检查和核扩散检测。确保国家和国际核安全。 HgTe / HgCdTe超晶格可以设计成选择性地运输一种载体,而阻碍另一种的运输。具体地,人们针对电场方向上的不期望的载流子设计了较大的载流子有效质量,这导致载流子速度低,但是不期望的载流子的状态密度低于可比的体半导体的载流子有效质量,这导致了低载流子集中,因此在电场下电流密度低。可以将相反的载流子种类设计成具有大的速度和高的状态密度,从而产生大的电流密度。通过采用HgTe / HgCdTe超晶格作为CdZnTe吸收体和金属触点之间的接触层,可以减少高电场下的泄漏电流,并有望提高X射线和γ射线探测器的性能。制备了Pixilated CdZnTe辐射探测器阵列,并对其进行了表征,以评估HgTe / HgCdTe超晶格在减少漏电流方面的有效性。电流-电压特性表明,相对于仅具有金属触点的检测器,HgTe / HgCdTe超晶格接触层始终可显着降低泄漏电流。©(2012)COPYRIGHT光电仪器工程师协会(SPIE)。摘要的下载仅允许个人使用。

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