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Accurate method for neutron fluence control used in improving neutron-transmutation-doped silicon for detectors

机译:用于改进探测器中子掺杂硅的中子注量控制的准确方法

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Abstract: Neutron transmutation doping (NTD) of silicon (Si) in nuclear reactors is known as a successful way of obtaining high-quality material for power devices. Using NTD of Si in order to obtain high-quality material for detectors requires an accurate neutron fluence control. The paper presents results obtained in this field using silicon slices as neutron calibration material. Irradiation was done in a vertical channel of the VVR-S nuclear reactor in Bucharest, Romania. Final resistivity of slices used for calibration was between 20 and 50 ohm $MUL cm. Special attention was paid to the accuracy of initial and final characterization of the slices concerning resistivity, lifetime, and defects, as well as to the neutron fluence calibration and control used during exposure. High-performance detectors were obtained using this material.!
机译:摘要:核反应堆中硅(Si)的中子trans变掺杂(NTD)是获得功率器件高质量材料的成功方法。为了获得用于探测器的高质量材料,使用Si的NTD需要精确的中子注量控制。本文介绍了使用硅片作为中子校准材料在该领域获得的结果。辐射是在罗马尼亚布加勒斯特的VVR-S核反应堆的垂直通道中进行的。用于校准的切片的最终电阻率在20至50 ohm $ MUL cm之间。特别注意有关电阻率,寿命和缺陷的切片的初始和最终表征的准确性,以及在曝光过程中使用的中子注量校准和控制。使用这种材料可以获得高性能的探测器!

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