Effect of Sub 1-nm Pt Nanoparticle on the Conduction Properties of Graphene Based Field Effect Transistor

摘要

We have developed a low-power tilted-target sputtering process for achieving sub-1 nm metal nanoparticles (NPs) with controlled sizes and number densities and narrow size distributions on graphene. In this report, the unique properties of Pt NPs and their applications in graphene-based field-effect transistor by modifying the conduction channel with sub 1-nm Pt NPs has been studied. By using ultra-small size Pt NPs with quantized energy levels, we influence the electrical properties of large-area single-layer graphene by both electron transfer, carrier scattering and strain, resulting in substantial Dirac point shifting in the I-V characteristics and change in conductivity, respectively, which could be helpful to better understand the metal NP-graphene interaction. We also show that the plasma damage created on the graphene surface from the sputter deposition of metal NPs can be removed by 250 ℃ annealing in hydrogen.