Stray inductances in GTO thyristor circuits

摘要

Gate turn-off thyristors (GTOs) interrupt current at suchntremendously high rates of fall, typically approaching 4000 A/μs innhigh power types, that the voltages induced by stray inductances as lownas a fraction of a microhenry can be damaging. This necessitates thenconnection of a snubber network across each GTO, into which its anodencurrent is diverted at turn-off. The authors present the results of anstudy into the relative importance of the various lumped circuit pathnstray inductances in generating these overshoot voltages. Mutualncoupling effects are ignored for simplification