Analysis of Auger Recombination Characteristics in High Resistivity Si and Ge

摘要

The characteristics of the band-to-band Auger recombination in Czochralski-grown high resistivity Si and Ge single crystals have been studied using a contactless technique to measure excess carrier decay transients based on infrared absorption by free carriers. The measurements are performed using laser light excitation with wavelengths ranging from 1.2 to 2.5 μm to reduce inhomogeneity effects in the extraction of the Auger recombination parameters. A linear approximation of the initial excess carrier decay lifetime yields an approximate value of the Auger recombination coefficient in Ge γ_(A,Ge)≈2×10~(-31) cm~6/s, which is close to that in Si. These characteristics also indicate that the difference in Auger recombination coefficients for the ehh and eeh processes is small. A more detailed fitting procedure applied simultaneously on a series of experimental transients yields a more accurate value of (8±3)×10~(31) cm~6/s for the Auger recombination coefficient in Ge.