Ⅲ-Nitride Materials and Devices for Power Electronics

摘要

Group Ⅲ-Nitride based devices are expected to compete and possibly outperform state of the art silicon carbide based devices for power electronic applications. GaN, AlGaN, AlInGaN and other Ⅲ-Nitride compound materials offer a very high breakdown field. Devices based on Ⅲ-Nitride compounds have very high electron density and mobility in the device channel, leading to record low device on-resistance, high temperature stability and low gate capacitance enabling high switching speed and low switching loss. In order to enable Ⅲ-Nitride based devices for power applications continuous efforts are underway in the area of material growth, novel power device concepts, designs, modeling and simulations.