Tamura Corporation, 2-3-1 Hirosedai, Sayama, Saitama 350-1328, Japan;
Tamura Corporation, 2-3-1 Hirosedai, Sayama, Saitama 350-1328, Japan;
Tamura Corporation, 2-3-1 Hirosedai, Sayama, Saitama 350-1328, Japan;
EPISTAR Corporation, 5 Li-hsin 5th Rd., Hsinchu Science Park, Hsinchu 300, Taiwan;
EPISTAR Corporation, 5 Li-hsin 5th Rd., Hsinchu Science Park, Hsinchu 300, Taiwan;
EPISTAR Corporation, 5 Li-hsin 5th Rd., Hsinchu Science Park, Hsinchu 300, Taiwan;
EPISTAR Corporation, 5 Li-hsin 5th Rd., Hsinchu Science Park, Hsinchu 300, Taiwan;
EPISTAR Corporation, 5 Li-hsin 5th Rd., Hsinchu Science Park, Hsinchu 300, Taiwan;
EPISTAR Corporation, 5 Li-hsin 5th Rd., Hsinchu Science Park, Hsinchu 300, Taiwan;
Light-emitting diode (LED); gallium oxide (Ga_2O_3); gallium nitride (GaN); high-power LED; crystal growth;
机译:在大气压金属 - 有机化学气相沉积中通过低温未掺杂-GaN和高温未掺杂GaN之间的非连续/连续生长在(-201)β-Ga_2O_3基板上制造GaN的LED
机译:B相的MOCVD生长(AL_XGA_(1-X))_ 2O_3 ON(201)B-GA_2O_3基板
机译:在透明和导电(-201)取向的β-Ga_2O_3衬底上生长的GaN / AIGaN多量子阱,用于UV垂直发光器件
机译:IngaN LED在β-GA_2O_3(201)基板上准备
机译:外延生长,纳米制剂和InGaN微LED的传质,用于显示器
机译:具有不同对称性的图案化蓝宝石衬底对InGaN基LED的光输出功率的影响
机译:InGaN / GaN LED的热电模型考虑了异源性测控基质的影响