Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland,TopGaN Ltd., Sokolowska 29/37, 01-142 Warsaw, Poland;
Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland,TopGaN Ltd., Sokolowska 29/37, 01-142 Warsaw, Poland;
Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland,TopGaN Ltd., Sokolowska 29/37, 01-142 Warsaw, Poland;
Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland;
Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland;
Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland;
Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland,TopGaN Ltd., Sokolowska 29/37, 01-142 Warsaw, Poland;
TopGaN Ltd., Sokolowska 29/37, 01-142 Warsaw, Poland;
Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland,TopGaN Ltd., Sokolowska 29/37, 01-142 Warsaw, Poland;
Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland;
Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland,TopGaN Ltd., Sokolowska 29/37, 01-142 Warsaw, Poland;
HVPE; GaN; non-polar GaN; semi-polar GaN; homoepitaxy;
机译:同质外延HVPE-GaN在非极性和半极性种子上的生长
机译:非极性和半极性HVPE GaN种子生长氨水GaN晶体的生长行为
机译:氨热晶种上半极性GaN卤化物气相外延的同质外延生长
机译:非极性种子的Homoepitaxial HVPE GaN生长
机译:光学建模,MOCVD生长和新型制造技术的半极(20-21)GaN倒装芯片边缘发射激光器结构
机译:HVPE在C面SiC上直接生长独立式GaN
机译:使用HVpE生长的GaN体靶通过激光分子束外延在钴蓝(0001)上高度c轴取向生长GaN膜
机译:稀土氯化物种植GaN纳米晶和微晶的生长。