Mechanical strain altered gate and substrate currents in n and p-channel MOSFETs

摘要

In this study, we experimentally examine the change of gate currents (Ig) and substrate currents (Isub) in n and pMOSFETs under different types mechanically applied stress. It is found that, under the uniaxial tensile stress, both Ig and Isub of pMOSFETs increase with the increase of the stress under the inversion condition. However, an opposite stress dependence in nMOSFETs could be observed for Ig and Isub. Similar changes were found for Ig and Isub of nMOSFETs under biaxial tensile stress. Furthermore, the results are explained by the strain altered band structure and the repopulation of carrier.