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COMPOSITIONAL MAPPING OF METAL FILMS BY FRICTION FORCE MICROSCOPY AND FORCE MODULATION METHODS

机译:摩擦力显微镜和力调制方法对金属膜的成分映射

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摘要

The characterization of metallic electrodes in semiconducting devices with high spacial resolution has become increasingly important. Scanning force microscopy (SFM) enables us to observe surface topographies on a nanometer scale as well as local mechanical properties such as friction force without any spacial surface treatment, while it is difficult to obtain high resolution with the conventional methods such as static time of flight-secondary ion mass spectroscopy and Auger electron spectroscopy because of their beam size. Here we have demonstrated the possibility of two dimensional mapping of the mechanical properties by friction force microscopy (FFM) and force modulation method (FMM) for Gold islands deposited on Nickel flat substrate. The FFM observation revealed that the grain size of the metallic islands ranged from 5 to 7000 nm. The friction force measurement showed that the friction force on Au islands was lower than the Ni substrate. The compositional high resolution mapping of metal films was obtained by FFM. In addition to the local mechanical measurement, FMM also showed the difference in stiffness between two materials.
机译:具有高空间分辨率的半导体器件中金属电极的表征已变得越来越重要。扫描力显微镜(SFM)使我们能够在不进行任何空间表面处理的情况下以纳米级观察表面形貌以及局部机械性能(例如摩擦力),而使用常规方法(例如静态飞行时间)则难以获得高分辨率二次离子质谱和俄歇电子能谱由于其束大小而异。在这里,我们已经证明了通过摩擦力显微镜(FFM)和力调制方法(FMM)对沉积在镍平坦基板上的金岛进行机械性能二维映射的可能性。 FFM观察表明,金属岛的晶粒尺寸为5至7000 nm。摩擦力测量表明,金岛上的摩擦力低于镍基体。通过FFM获得金属膜的成分高分辨率映射。除了局部机械测量,FMM还显示了两种材料之间的刚度差异。

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  • 会议地点 San Francisco CA(US)
  • 作者单位

    Evaluation and Analysis Department ULSI Process Technology Development Center,Semiconductor Group Matsushita Electronics Corporation, 19 Nishikujo-Kasugacho,Minami-ku, Kyoto 601-8413, Japan Department of Electronics Science and Engineering, Kyoto University,Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan;

    Department of Electronics Science and Engineering, Kyoto University,Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan;

    Department of Electronics Science and Engineering, Kyoto University,Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 TB329;
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