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DNA Gating effect from single layer graphene

机译：单层石墨烯的DNA门控效应

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摘要

In this letter, single stranded Deoxyribonucleic Acids (ssDNA) are found to act as negative potential gating agents that increase the hole density in single layer graphene (SLG). Current-voltage measurement of the hybrid ssDNA/graphene system indicates a shift in the Dirac point and "intrinsic" conductance after ssDNA is patterned. The effect of ssDNA is to increase the hole density in the graphene layer, which is calculated to be on the order of 1.8×10~(12) cm~(-2). This increased density is consistent with the Raman frequency shifts in the G-peak and 2D band positions and the corresponding changes in the G-peak full-width half maximum. This patterning of DNA on graphene layers could provide new avenues to modulate their electrical properties and for novel electronic devices.
机译：在这封信中，发现单链脱氧核糖核酸（ssDNA）充当负电位门控剂，可增加单层石墨烯（SLG）中的空穴密度。混合ssDNA /石墨烯系统的电流-电压测量表明，在对ssDNA进行构图后，狄拉克点和“固有”电导发生了变化。 ssDNA的作用是增加石墨烯层中的空穴密度，该密度约为1.8×10〜（12）cm〜（-2）。这种增加的密度与G峰和2D波段位置的拉曼频移以及G峰全角半峰的相应变化一致。 DNA在石墨烯层上的这种图案化可以提供新的途径来调节其电学性质并用于新型电子设备。

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  • 来源
  • 会议地点 San Francisco CA(US);San Francisco CA(US)
  • 作者

    Jian Lin; Desalegne Teweldebrhan; Khalid Ashraf; Guanxiong Liu; Xiaoye Jing; Zhong Yan; Mihrimah Ozkan; Roger K. Lake; Alexander A. Balandin; Cengiz S. Ozkan;

  • 作者单位

    Department of Mechanical engineering, University of California at Riverside, Riverside, CA 92521, U.S.A.,Department of Electrical engineering, University of California at Riverside, Riverside, CA 92521, U.S.A.;

    Department of Electrical engineering, University of California at Riverside, Riverside, CA 92521, U.S.A.;

    Department of Electrical engineering, University of California at Riverside, Riverside, CA 92521, U.S.A.;

    Department of Electrical engineering, University of California at Riverside, Riverside, CA 92521, U.S.A.;

    Department of Electrical engineering, University of California at Riverside, Riverside, CA 92521, U.S.A.;

    Department of Electrical engineering, University of California at Riverside, Riverside, CA 92521, U.S.A.;

    Department of Electrical engineering, University of California at Riverside, Riverside, CA 92521, U.S.A.;

    Department of Electrical engineering, University of California at Riverside, Riverside, CA 92521, U.S.A.;

    Department of Electrical engineering, University of California at Riverside, Riverside, CA 92521, U.S.A.,Department of Material science and engineering, University of California at Riverside, Riverside, CA 92521, U.S.A.;

    Department of Mechanical engineering, University of California at Riverside, Riverside, CA 92521, U.S.A.,Department of Material science and engineering, University of California at Riverside, Riverside, CA 92521, U.S.A.;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
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