ELECTRICAL PERFORMANCE OF MOS DEVICES WITH PLASMA DEPOSITED ZrO_2-SiO_2 PSEUDO-BINARY SILICATE ALLOYS

摘要

This paper presents a study of the chemical, micro-structural and electrical properties of the ZrO_2-SiO_2 alloy system. These alloys were deposited on Si(100) at 300℃ by remote plasma enhanced chemical vapor deposition. Composition was controlled over the entire pseudo-binary join by varying the flow rates of the respective Zr and Si atom source gases. Characterizations of the as-deposited and annealed films were by on line Auger electrons spectroscopy, and off-line Rutherford backscattering, X-ray photo-electron spectroscopy, Fourier transform infrared spectroscopy, Raman scattering, X-ray diffraction and transmission electron microscopy. SiO_2-rich films are amorphous and remain so up annealing temperatures of 900℃. Electrical evaluation has been in capacitors with Al gate electrodes.