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ON THE GROWTH, MICROSTRUCTURE AND PROPERTIES OF TiN AND TiC WHISKER-LIKE CRYSTALS

机译:TiN和TiC晶须状晶体的生长,微观结构和性能

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摘要

TiN and TiC whisker-like crystals with maximum length 8 mm and diameter 500 μm were obtained by Chemical Vapour Deposition (CVD) on various substrates at a temperature from 950-1450℃. In the case of TiN and TiC whiskers obtained on substrates doped with Ni it was found that in the initial stage their growth took place via the Vapour-Liquid-Solid (VLS) mechanism. Crystallographic orientation of TiN and TiC whisker-like crystals growth axis and the Mueller indices of their side faces were determined by X-ray rotation and Laue methods and also measurement of angles between whisker faces with a two circle reflection goniometer. All the whiskers were found to be single crystals. They exhibited various growth directions, most often [111], [110] and [001]. The microstructure of as-grown TiN and TiC whiskers was examined using Lang X-ray topography, transmission electron microscopy (TEM) and also the Eshelby measurement of the twist of the crystal lattice. Tensile strength, Vickers microhardness and electrical resistivity of TiN and TiC whiskers was determined.
机译:在950-1450℃的温度下,通过化学气相沉积法(CVD)获得了最大长度为8mm,直径为500μm的TiN和TiC晶须状晶体。对于在掺杂有Ni的衬底上获得的TiN和TiC晶须,发现它们的生长最初是通过蒸气-液体-固体(VLS)机制发生的。通过X射线旋转和Laue方法确定TiN和TiC晶须状晶体的晶体学取向以及其侧面的Mueller指数,并使用两圆反射测角仪测量晶须面之间的角度。发现所有晶须都是单晶。它们表现出不同的生长方向,最常见的是[111],[110]和[001]。使用Lang X射线形貌图,透射电子显微镜(TEM)以及晶格扭曲的Eshelby测量来检查生长的TiN和TiC晶须的微观结构。测定了TiN和TiC晶须的拉伸强度,维氏显微硬度和电阻率。

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