Influence of radiation defects on the heterogeneity distribution and radiant recombination of GaP

机译：辐射缺陷对GaP异质分布和辐射复合的影响

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Abstract: In the present work the results of the action of penetrating radiation on GaP structures has been studied. !6

机译：摘要：在本工作中，已经研究了穿透辐射对GaP结构的作用结果。！6

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《Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics》|1998年|p.555-558|共4页
会议地点 Kiev(UA)
作者
Volodimir P. Tartachnik; Institute for Nuclear Research; Kiev; Ukraine; Olexsandr M. Gontaruk; Institute of Semiconductor Physics; Kiev; Ukraine; Dmytro V. Korbutiak; Institute of Semiconductor Physics; Ukraine; Anatoly M. Krajchynskyj; Institute of Physi;
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正文语种 eng
中图分类红外技术及仪器;
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Influence of radiation defects on the heterogeneity distribution and radiant recombination of GaP

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