Abstract: The main results of complex physical-technological research for undoped and controllable doped with different impurities CdTe crystals are presented. THe doped by impurities of IV groups elements and isoelectronic impurities crystals, which characterizing high transmission in the wide spectral range, can be successfully used at the development and fabrication of high effective optical IR devices elements. Doping of elements with un-filled 3D-shells can greatly reduce a transparency of crystal in RI range of spectrum. The physical properties of semi-insulating CdTe:Ge(Sn) and CdTe:Ti(V,Ni) crystals determined by deep local levels, placed in the field of middle of forbidden band that specified admixtures stipulated by compensating action of in CdTe. Such crystals perspective for photorefractive using in telecommunicative networks. !14
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