Silicon p-i-n photodiode with low values of dark current

摘要

Abstract: Dark current dependence of silicon p-i-n photodiode on the p$+$PLU$/-type layer location depth at the photodiode crystal back. It was revealed that the smallest specific values of dark current is obtained at 6-9 $mu@m p$+$PLU$/- type layer depth. Three mechanisms that explain the obtained results were considered: dislocational, metal impurities and strain influence on the metal - semiconductor edge. !8