Comparing the low-temperature performance of megapixel NIR InGaAs and HgCdTe imager arrays

摘要

We compare a more complete characterization of the low temperature performance of a nominal 1.7um cut-off wavelength 1k×1k InGaAs (lattice-matched to an InP substrate) photodiode array against similar, 2k×2k HgCdTe imagers to assess the suitability of InGaAs FPA technology for scientific imaging applications. The data we present indicate that the low temperature performance of existing InGaAs detector technology is well behaved and comparable to those obtained for state-of-the-art HgCdTe imagers for many space astronomical applications. We also discuss key differences observed between imagers in the two material systems.