Characterization of transparent conductors in indium Zinc oxide and their application to thin-film transistor liquid-crystal displays

摘要

Investigation of the properteis of indium zinc oxide (IZO) thin films sputter-deposited on LCD-grade galss substrate showed that the resistivity of an IZO film decreases markedly as the substrate temperature is increased from room-temperature to 120 deg. This phenomenon can be attributed to the growth of In-Zn intermetallic compounds in the amorphous region as a result of annealing. The compound growth was observed by plan-view transmission electron microscopy.