A COMPARISON BETWEEN POINT DEFECT INJECTING PROCESSES IN SILICON USING EXTENDED DEFECTS AND DOPANT MARKER LAYERS AS POINT DEFECT DETECTORS

摘要

In this work we use dislocation loops and boron - doped 5-layers to monitor the interstitial injection during common and nitrous oxidation of silicon at low temperatures (850-950 ℃). The interstitials captured by the loops are measured using Transmission Electron Microscopy. The number of Si atoms released after oxynitridation was calculated from the difference between the total number of atoms stored in the loops for oxidizing and inert ambient. We found that this number is larger compared with the same dry oxygen oxidation conditions. This result is also confirmed by measuring the diffusivity enhancement of boron δ - layers during oxidation under both ambients.